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NTE2399

Part Number	NTE2399
Manufacturer	NTE
Description	N-CHANNEL MOSFET
Published	May 9, 2005
Detailed Description	NTE2399 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D ...
Datasheet	NTE2399 PDF File

Overview

NTE2399 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C .
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3.
1A TC = +100°C .
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2.
0A Pulsed Drain Current (Note 1), IDM .
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12A Power Dissipation (TC = +25°C), PD .
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125W Derate Linearly Above 25°C .
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1.
0W/°C Gate–to–Source Voltage, VGS .
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±20 Single Pulse Avalanche Energy (Note 2), EAS .
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280mJ Avalanche Current (Note 1), IAR .
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3.
1A Repetitive Avalanche Energy (Note 1), EAR .
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13mJ Peak Diode Recovery dv/dt (Note 3), dv/dt .
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1.
0V/ns Operating Junction Temperature Range, TJ .
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–55° to +150°C Storage Temperature Range, Tstg .
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–55° to +150°C Lead Temperature (During Soldering, 1.
6mm from case for 10sec), TL .
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+300°C Mounting Torqu...

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