GaAs PIN Photodiode Chips - Microsemi
Description
MXP3000 Series
GaAs PIN Photodiode Chips
OPTO ELECTRONIC PRODUCTS
P RODUCT P REVIEW
DESCRIPTION
KEY FEATURES
W W W .
Microsemi .
COM
Microsemi’s GaAs PIN Photodiode chips are ideal for wide bandwidth 850nm optical networking applications.
The five devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 1.
4 GHz (active area of 250 mm2), 1.
75 GHz(active area of 200 mm2), 5 GHz (active area of 100 mm2), 7 GHz (active area of 60 mm2), and 8.
75 GHz (active area of 30 mm2),
The MXP3000 series of photodiodes are originally offered in die form for manufacturers of photodiode modules, supervisory pump laser circuits, and combination PIN Photodiode-transimpedance amplifier hybrids.
!" Low Dark Current !" Extremely low capacitance !" Wide bandwidth !" Fast response time APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS !" 850nm Fiber Optic Applications
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.
microsemi.
com
Item
Active Area(Dia.
) Photo Sensitive Area Detection Range Responsivity Dark Current Capacitance Rise/Fall Time Bandwidth Breakdown Voltage Chip Size Bonding Pad Size
Sym
— — R Idark C tr/tf VB
MXP3001
30 0.
0007 850 0.
45 1 0.
3 40 8.
75 20 350 x 350 40 x 100
Part Ratings and Characteristics MXP3002 MXP3003 MXP3004
60 0.
0028 850 0.
45 1 0.
4 50 7 20 350 x 350 40 x 100 100 0.
0078 850 0.
45 1 0.
6 70 5 20 350 x 350 100 200 0.
0314 850 0.
45 2 1.
5 200 1.
75 20 500 x 500 100
MXP3005
250 0.
0491 850 0.
45 3 2 250 1.
4 20 500 x 500 100
Unit
mm2 mm2 Nm A/W nA pF ps GHz um x um um x um
Test Condition
— — VR=-5V, l = 850nm VR=-5V VR=-5V VR=-5V, @ 850nm VR=-5V, @ 850nm IR=10uA
MXP3000 SERIES
Copyright 2000 MSC1592.
PDF 2000-10-16
Microsemi
Opto Electronics Products Group 2830 S.
Fairview Street, Santa Ana, CA 92704, (714) 979-8220 Fax (714)966-5256 http://www.
microsemi.
com/opto
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