MXP3001 Datasheet

MXP3001 GaAs PIN Photodiode Chips

KEY FEATURES W W W . Microsemi . COM Microsemi’s GaAs PIN Photodiode chips are ideal for wide bandwidth 850nm optical networking applications. The five devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 1.4 GHz (act.

Features

W W W . Microsemi . COM Microsemi’s GaAs PIN Photodiode chips are ideal for wide bandwidth 850nm optical networking applications. The five devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 1.4 GHz (active area of 250 mm2), 1.75 GHz(active area of 200 mm2), 5 GHz (active area of 100 mm2), 7 GHz (active area of 60 mm2), and 8.75 GHz (active area of 30 mm2), The MXP3000 series of photodiodes are originally offered in die form for manufacturers of photodiode modules, supervisory pump laser circuits, and combinati.