Transistors - Motorola
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTA92LT1/D
High Voltage Transistors
PNP Silicon
1 BASE
COLLECTOR 3
MMBTA92LT1* MMBTA93LT1
*Motorola Preferred Device
2 EMITTER
3 1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MMBTA92 –300 –300 –5.
0 –500 MMBTA93 –200 –200 –5.
0 Unit Vdc Vdc Vdc mAdc
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA PD 556 300 2.
4 RqJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = –1.
0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –200 Vdc, IE = 0) (VCB = –160 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.
0 Vdc, IC = 0) 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
3.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.
0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO MMBTA92 MMBTA93 V(BR)CBO MMBTA92 MMBTA93 V(BR)EBO ICBO MMBTA92 MMBTA93 IEBO — — — –0.
25 –0.
25 –0.
1 –300 –200 –5.
0 — — — –300 –200 — —
Vdc
Vdc
Vdc µAdc
µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
1996
1
MMBTA92LT1 MMBTA93LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Charac...
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