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MMBT6427LT1

Part Number	MMBT6427LT1
Manufacturer	ON
Description	NPN Transistor
Published	May 9, 2005
Detailed Description	com MMBT6427LT1 Preferred Device Darlington Transistor NPN Silicon Features • Pb−Free Package is Avai...
Datasheet	MMBT6427LT1 PDF File

Overview

com MMBT6427LT1 Preferred Device Darlington Transistor NPN Silicon Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 40 40 12 500 Unit Vdc Vdc Vdc mAdc http://onsemi.
com COLLECTOR 3 BASE 1 EMITTER 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.
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