Low Noise Transistor - Motorola
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT2484LT1/D
Low Noise Transistor
NPN Silicon
1 BASE
COLLECTOR 3
MMBT2484LT1
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 60 60 6.
0 50
2 EMITTER
1
3
Unit Vdc Vdc Vdc mAdc
2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA PD 556 300 2.
4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
MMBT2484LT1 = 1U
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) (VCB = 45 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB = 5.
0 Vdc, IC = 0) 1.
FR– 5 = 1.
0 0.
75 2.
Alumina = 0.
4 0.
3 V(BR)CEO 60 V(BR)CBO 60 V(BR)EBO 5.
0 ICBO — — IEBO — 10 10 10 nAdc µAdc nAdc — — Vdc — Vdc Vdc
0.
062 in.
0.
024 in.
99.
5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
1996
1
MMBT2484LT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.
0 mAdc, VCE = 5.
0 Vdc) (IC = 10 mAdc, VCE = 5.
0 Vdc) Collector – Emitter Saturation Voltage (IC = 1.
0 mAdc, IB = 0.
1 mAdc) Base – Emitter On Voltage (IC = 1.
0 mAdc, VCE = 5.
0 mAdc) hFE 250 — VCE(sat) — VBE(on) — 0.
95 0.
35 Vdc — 800 Vdc —
SM...
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