DatasheetsPDF.com

NEZ4450-8D

NEC
Part Number NEZ4450-8D
Manufacturer NEC
Description 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Published May 7, 2005
Detailed Description PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs ...
Datasheet PDF File NEZ4450-8D PDF File

NEZ4450-8D
NEZ4450-8D

Overview
PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.
Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band.
To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance.
PACKAGE DIMENSIONS (unit: mm) 0.
5±0.
1 2.
5MIN.
C1.
5 4PLACES SOURCE R1.
6 2PLACES GATE 2.
4 12.
9±0.
2 3.
2 6.
45±0.
05 DRAIN 17.
0±0.
2 21.
0±0.
3 10.
7 2.
5MIN.
SELECTION CHART NEZ PART NUMBER NEZ3642-4D, 8D, 8DD NEZ4450-4D, 4DD/8D, 8DD NEZ5964-4D, 4DD/8D, 8DD NEZ6472-4D, 4DD/8D, 8DD NEZ7177-4D, 4DD/8D, 8DD NEZ7785-4D, 4DD/8D, 8DD FREQUENCY BAND (GHz) 3.
6 to 4.
2 +0.
1 0.
1–0.
05 5.
0MAX.
0.
2MAX.
2.
6±0.
2 1.
6 4.
4 to 5.
0 5.
9 to 6.
45 6.
4 to 7.
2 7.
1 to 7.
7 7.
7 to 8.
5 12.
0 FEATURES • Internally matched to 50 Ω • High power output • High linear gain • High reliability • Low distortion Document No.
P10981EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 4W/8W C-BAND POWER-GaAs FET NEZ Series ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) RATINGS NEZ-4D, 4DD Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS VGD ID IG P T* Tch Tstg 15 – 12 – 18 4.
5 25 25 175 – 65 to + 175 NEZ-8D, 8DD 15 –12 – 18 9.
0 50 50 175 – 65 to + 175 V V V A mA W ˚C ˚C CHARACTERISTIC SYMBOL UNIT *TC = 25 ˚C ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Saturated Drain Current SYMBOL IDSS Part No.
NEZ-4D NEZ-8D, 8DD Pinch-off Voltage VP NEZ-4D, 4DD NEZ-8D, 8DD Trans-Conductance gm NEZ-4D, 4DD NEZ-8D, 8DD Gate to Drain Voltage BVGD0 NEZ-4D, 4DD NEZ-8D,...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)