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NEL2004F02-24

Part Number	NEL2004F02-24
Manufacturer	NEC
Description	NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
Published	May 7, 2005
Detailed Description	DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION...
Datasheet	NEL2004F02-24 PDF File

Overview

DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.
8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.
OUTLINE DIMENSIONS (Unit: mm) 2 2 ±0.
2 3 ±0.
2 2 ±0.
2 2 × φ 3.
2 ±0.
3 1 1 5.
85 ±0.
2 2.
58 ±0.
3 FEATURES • High Linear Power and Gain 4.
2 ±0.
4 0.
1 +0.
05 –0.
02 1 1 3 3.
6 ±0.
5 3.
6 ±0.
5 12.
4 ±0.
2 9.
2 ±0.
2 4.
6 ±0.
2 • Low Internal Modulation Distortion • High Reliability Gold Metallization • Emitter Ballasting • 24 V Operation 1 - EMITT...

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NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier - NEC

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