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NE76000

NEC
Part Number NE76000
Manufacturer NEC
Description LOW NOISE L TO Ku BAND GaAs MESFET
Published May 7, 2005
Detailed Description LOW NOISE L TO Ku BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5...
Datasheet PDF File NE76000 PDF File

NE76000
NE76000

Overview
... Ga 3 2.
5 2 1.
5 1 NF 0.
5 0 1 NE76000 NOISE FIGURE & ASSOCIATED GAIN vs.
FREQUENCY VDS = 3 V, IDS = 10 mA 24 21 18 15 12 9 6 3 0 10 20 • LG = 0.
3 µm, WG = 280 µm • ION IMPLANTATION DESCRIPTION The NE76000 provides a low noise figure and high associated gain through K-Band.
The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity.
These devices feature a recessed 0.
3 micron gate and triple epitaxial technology.
The surface of the device, except for bonding pads, is passivated with SiO2 and Si3N4 for scratch protection as well as surface stability.
NEC's stringent quality assurance and test procedures ensure the highest reliability...


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