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MJD31

Part Number	MJD31
Manufacturer	Fairchild
Description	NPN Epitaxial Silicon Transistor
Published	May 7, 2005
Detailed Description	MJD31/31C — NPN Epitaxial Silicon Transistor MJD31/31C NPN Epitaxial Silicon Transistor Features • General Purpose Ampl...
Datasheet	MJD31 PDF File

Overview

MJD31/31C — NPN Epitaxial Silicon Transistor MJD31/31C NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C February 2012 1 D-PAK 1 I-PAK 1.
Base 2.
Collector 3.
Emitter Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : MJD31 : MJD31C VCEO Collector-Emitter Voltage : MJD31 : MJD31C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC = 25°C) Collector Dis...

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