C band internally matched power GaAs FET - Mitsubishi
Description
< C band internally matched power GaAs FET >
MGFC40V7785
7.
7 – 8.
5 GHz BAND / 10W
DESCRIPTION
The MGFC40V7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.
7 – 8.
5 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=10W (TYP.
) @f=7.
7 – 8.
5GHz High power gain
GLP=7dB (TYP.
) @f=7.
7 – 8.
5GHz High power added efficiency
P.
A.
E.
=32% (TYP.
) @f=7.
7 – 8.
5GHz Low distortion [item -51]
IM3=-45dBc (TYP.
) @Po=29dBm S.
C.
L
APPLICATION
item 01 : 7.
7 – 8.
5 GHz band power amplifier item 51 : 7.
7 – 8.
5 GHz band digital radio communication
OUTLINE DRAWING
Unit: millimeters (inches)
R1.
25
24+ /-0.
3
(1) 0.
6+/-0.
15
2MIN
R1.
2
(2)
17.
4+/-0.
3 8.
0+/-0.
2
2MIN
(3) 20.
4+/-0.
2
13.
4
0.
1 2.
4+/-0.
2 15.
8
4.
0+/-0.
4 1.
4
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=2.
4A RG=50ohm Refer to...
Similar Datasheet
