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MGFC40V7177

Mitsubishi
Part Number MGFC40V7177
Manufacturer Mitsubishi
Description C band internally matched power GaAs FET
Published Apr 29, 2005
Detailed Description < C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W DESCRIPTION The MGFC40V7177 is an int...
Datasheet PDF File MGFC40V7177 PDF File

MGFC40V7177
MGFC40V7177

Overview
< C band internally matched power GaAs FET > MGFC40V7177 7.
1 – 7.
7 GHz BAND / 10W DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.
1 – 7.
7 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Internally matched to 50(ohm) system • High output power P1dB=10W (TYP.
) @f=7.
1 – 7.
7GHz • High power gain GLP=8.
0dB (TYP.
) @f=7.
1 – 7.
7GHz • High power added efficiency P.
A.
E.
=30% (TYP.
) @f=7.
1 – 7.
7GHz • Low distortion [item -51] IM3=-45dBc (Typ.
) @Po=29.
0dBm S.
C.
L APPLICATION • item 01 : 7.
1 – 7.
7GHz band microwave high power amplifier • item 51 : 7.
1 – 7.
7GHz band digital radio communic...


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