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MGF2445A

Mitsubishi
Part Number MGF2445A
Manufacturer Mitsubishi
Description High-power GaAs FET
Published Apr 29, 2005
Detailed Description < High-power GaAs FET (small signal gain stage) > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, p...
Datasheet PDF File MGF2445A PDF File

MGF2445A
MGF2445A

Overview
< High-power GaAs FET (small signal gain stage) > MGF2445A S to Ku BAND / 1.
6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers.
FEATURES  High output power Po=32.
0dBm(TYP.
) @f=12GHz  High linear power gain GLP=6.
0dB(TYP.
) @f=12GHz APPLICATION  S to Ku Band power amplifiers QUALITY  IG RECOMMENDED BIAS CONDITIONS  Vds=10V  Ids=450mA Absolute maximum ratings (Ta=25C) Symbol Parameter VGDO VGSO ID IGR IGF PT*1 Tch Tstg Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature *1:Tc=25C Ratings -15 -15 1500 -3.
6 15 10 175 -65 to +175 Unit V V mA mA mA W C C Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that troub...


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