DatasheetsPDF.com

MG100J2YS50

Toshiba
Part Number MG100J2YS50
Manufacturer Toshiba
Description N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published Apr 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MG100J2YS50 High Power Switching Applications Motor Control Applications MG10...
Datasheet PDF File MG100J2YS50 PDF File

MG100J2YS50
MG100J2YS50

Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG100J2YS50 High Power Switching Applications Motor Control Applications MG100J2YS50 Unit: mm l The electrodes are isolated from case.
l High input impedance.
l Includes a complete half bridge in one package.
l Enhancement-mode.
l High speed : tf = 0.
30µs (Max) (IC = 100A) trr = 0.
15µs (Max) (IF = 100A) l Low saturation voltage : VCE (sat)=2.
70V (Max) (IC=100A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc=25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDEC EIAJ TOSHIBA Weight: 202g (Typ.
) Rating 600 ±20 100 200 100 200 450 150 −40 ~ 125 2500 (AC 1 min.
) 3/3 Unit V V A A W °C °C V N·m ― ― 2-94D1A 000707EAA2 · TOSHIBA is continually working to improve the quality and reliabili...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)