ion–implanted arsenic emitter transistors and an all gold metallization system. • 5th Generation Die Technology • Specified for 60/77–Channel Performance • Broadband Power Gain — @ f = 40 – 550 MHz Gp = 18.5 dB Typ @ 50 MHz Gp = 19.2 dB Typ @ 450 MHz...
MHW6185B PDF File
