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MGY20N120D

Motorola
Part Number MGY20N120D
Manufacturer Motorola
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Published Apr 27, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY20N120D/D ™ Data Sheet Insulated Gate Bipolar Transis...
Datasheet PDF File MGY20N120D PDF File

MGY20N120D
MGY20N120D

Overview
...tor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives.
Fast switching characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• • • • • • Industry Standard High Power TO–264 Package (TO–3PBL) High Spe...


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