• Robust High Voltage Termination
• ESD Protection Gate
–Emitter Zener Diodes C MGW21N60ED IGBT IN TO
–247 21 A @ 90°C 31 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED ON
–VOLTAGE G G C E E CASE...
MGW21N60ED PDF File
| Part Number | MGW21N60ED |
| Manufacturer | Motorola |
| Title | Insulated Gate Bipolar Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Preliminary Data Sheet Insulated Gate Bipolar Transistor N–Channel E... |
| Features |
Soft Recovery Free Wheeling Diode is included in the Package • Robust High Voltage Termination • ESD Protection Gate –Emitter Zener Diodes C MGW21N60ED IGBT IN TO –247 21 A @ 90°C 31 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED ON –VOLTAGE G G C E E CASE... |
| Published | Apr 27, 2005 |
| Datasheet |
MGW21N60ED PDF File
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