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MGP4N60E

Motorola
Part Number MGP4N60E
Manufacturer Motorola
Description Insulated Gate Bipolar Transistor
Published Apr 27, 2005
Detailed Description MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP4N60E/D Insulated Gate Bipolar Transistor ...
Datasheet PDF File MGP4N60E PDF File

MGP4N60E
MGP4N60E

Overview
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP4N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on).
It also provides fast switching characteristics and results in efficient operation at high frequencies.
This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.
• • • • • • Industry Standard TO–220 P...


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