Silicon epitaxial planar type Switching Diodes - Panasonic
Description
Switching Diodes
MA6X128
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.
65 ± 0.
15
2.
8 − 0.
3 1.
5 − 0.
05 6 1.
9 ± 0.
2 0.
95 0.
95 5 1
+ 0.
25
+ 0.
2
0.
65 ± 0.
15 0.
3 − 0.
05
+ 0.
1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC)*1 Peak forward current*1 Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C
1 : Cathode 3,4 4 : Cathode 1,2 2 : Anode 1 5 : Anode 3 3 : Anode 2 6 : Anode 4 Mini Type Package (6-pin)
Marking Symbol: M2V Internal Connection
6 5 4 1 2 3
Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Note) *1 : Value for single diode *2 : t = 1 s
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.
1 · IR, RL = 100 Ω 80 2 3 Conditions Min Typ Max 100 1.
2 Unit nA V V pF ns
Note) 1.
Rated input/output frequency: 100 MHz 2.
* : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.
1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.
35 ns δ = 0.
05
0 to 0.
1
• Four-element contained in one package, allowing high-density mounting • Centrosymmetrical wiring, allowing to free from the taping direction • The mirror image wiring of (MA6X123) • Short reverse recovery time trr • Small terminal capacitance, Ct • High breakdown voltage (VR = 80 V)
2.
9 − 0.
05
+ 0.
2
2
4
3
1.
1 − 0.
1
0.
1 to 0.
3 0.
4 ± 0.
2
0.
8
0.
16 − 0.
06
+ 0.
2
+ 0.
1
1.
45
I Features
1
MA6X128
IF V F
103
Switching Diodes
IR V R
100 Ta = 150°C
1.
6 1.
4
VF Ta
102
10
Forward current IF (mA)
Reverse current IR (µA)
Forward voltage VF (V)
100°C 1
1.
2 1.
0 0.
8 0.
6 0.
4 0.
2 IF = 100 mA
10
1
...
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