Switching Diodes
MA6X125
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
• Four-element contained in one package, allowing high-density mounting
2. 8 − 0. 3 0. 65 ± 0. 15 6
1. 9 ± 0. 2 0. 95 0. 95
+ 0. 2
1. 5 − 0. 05 1
+ 0. 25
0. 65 ± 0. 15
1. 45 ± 0. 1 0. 3 − 0. 05
+ 0. 1
2. 9 − 0. 05
+ 0. 2
5
2
4
3
Peak reverse voltage Forward current (DC)* Peak forward current*
VRM IF IFM Tj Tstg
40 100 200 150 −55 to +150
V mA mA °C °C
Junction temperature Storage temperature Note) *1 : Value for single diode
1 : Cathode 1 2 : Anode 2 3 : Cathode 3 Anode 4
0 to 0. 1
Reverse voltage (DC)
VR
40
V
0. 1 to 0. 3 0. 4 ± 0. 2
0. 8
Parameter
Symbol
Rating
Unit
1. 1 − 0. 1
4 : Anode 3 5 : Cathode 4 6 : Anode 1 Cathode 2
Mini Type Package (6-pin)
Marking Symbol: M2I Internal Connection
6 5 4 1 2 3
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time*3 Symbol IR VF VR Ct trr1*1 trr2
*2
Conditions VR = 40 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0. 1 · IR, RL = 100 Ω
Min
Typ
Max 100 1. 2
0. 16 − 0. 06
I Absolute Maximum Ratings Ta = 25°C
+ 0. 2
0. 5 − 0. 05
+ 0. 1
+ 0. 1
Unit nA V V
40 5 150 90
pF ns
Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 1 and 6, Between pins 3 and 5 *2 : Between pins 2 and 6, Between pins 3 and 4 *3 : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0. 1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W. F. Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0. 35 ns δ = 0. 05
1
MA6X125
IF V F
1 000 Between pins 2 and 6, 3 and 4 1 000 Between pins 1 and 6, 3 and 5
Switching Diodes
IF V F
10 Ta = 100°C
IR V R
100
100
1
Forward current IF (mA)
Forward current IF (mA)
10
Ta = 150°C 100°C 25°C − 20°C
Reverse current IR (nA)
10
0. 1
1
1 Ta = 150°C 100°C 25°C 0. 1 − 20°C
0. 01 25°C
0. 1
0...
MA6X125 PDF File
