High Q Hyperabrupt Tuning Varactors - Tyco
Description
High Q Hyperabrupt Tuning Varactors
Features
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MA4ST550 Series
V3.
00
Case Styles
q
High Q Usable Capacitance Change of 7:1 Low Reverse Leakage for Good Post Tuning Drift Characteristics Reproducible C-V Curves
Description
The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form.
The MA4ST550 series of diodes is available with junction capacitances of approximately 0.
8 pF to 8.
2 pF at -4 volts.
These diodes have capacitance change ratios as high as 7:1.
30
31
Applications
The MA4ST550 series is appropriate for use in VCOs with frequencies within the range of approximately 1-14 GHz where a large capacitance change is required.
These diodes are suited for VCOs in missile seekers, telecommunication systems and electronic warfare systems with critical post tuning drift specifications.
134
Environmental Performance
All tuning varactors in ceramic packages are capable of meeting the performance tests dictated by the methods and procedures of the latest revisions of MIL-S-19500, MILSTD-202 and MIL-STD-750 which specify mechanical, electrical, thermal and other environmental tests common to semiconductor products.
Absolute Maximum Ratings at 25°C
Parameter Reverse Voltage Operating Temperature Storage Temperature Temperature Coefficient Absolute Maximum Same as Breakdown Voltage - 65°C to +150°C - 65°C to +200°C 400 ppm/°C at -4 Volts
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America: Tel.
(800) 366-2266 Fax (800) 618-8883
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1
Asia/Pacific: Tel.
+81 (03) 3226-1671 Fax +81 (03) 3226-1451
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Europe: Tel.
+44 (1344) 869 595 Fax +44 (1344) 300 020
High Q Hyperabrupt Tuning Varactors Electrical Specifications at 25°C
Breakdown Voltage = 22 Volts Minimum @ 10 Microamps Reverse Current = 50 nAmps Maximum @ 20 Volts and 25°C
Model Number MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST555 MA4ST556 MA4ST557 MA4ST558 MA4ST559 MA4ST560 MA4ST561 MA4ST...
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