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MA3X788

Panasonic
Part Number MA3X788
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3X788 Silicon epitaxial planar type For super-high speed switching circuit For small cu...
Datasheet PDF File MA3X788 PDF File

MA3X788
MA3X788

Overview
Schottky Barrier Diodes (SBD) MA3X788 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Allowing to rectify under (IF(AV) = 200 mA) condition • Reverse voltage VR (DC value) = 60 V guaranteed 2.
9 − 0.
05 + 0.
2 2.
8 − 0.
3 0.
65 ± 0.
15 1.
5 + 0.
2 Unit : mm 0.
65 ± 0.
15 + 0.
25 − 0.
05 0.
95 1.
9 ± 0.
2 1 3 2 0.
95 1.
45 0 to 0.
1 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IFM IF(AV) IFSM Tj Tstg 60 60 300 200 1 125 −55 to +125 V V mA mA A °C °C 0.
1 to 0.
3 0.
4 ± 0.
2 0.
8 Parameter Symbol Rating Unit 1.
1 − 0.
1 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M3V Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 50 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 30 3 Conditions Min Typ Max 50 0.
65 Unit µA V pF ns Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 1 000 MHz 3.
* : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 0.
16 − 0.
06 + 0.
2 + 0.
1 I Absolute Maximum Ratings Ta = 25°C 0.
4 − 0.
05 + 0.
1 1 MA3X788 IF  V F 103 Schottky Barrier Diodes (SBD) VF  Ta 1.
0 104 Ta = 150°C IR  VR 102 Ta = 150°C Forward current IF (mA) 0.
8 103 Forward voltage VF (V) ...


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