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MA3X787

Panasonic
Part Number MA3X787
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3X787 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit F...
Datasheet PDF File MA3X787 PDF File

MA3X787
MA3X787

Overview
Schottky Barrier Diodes (SBD) MA3X787 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 2.
9 − 0.
05 + 0.
2 2.
8 − 0.
3 0.
65 ± 0.
15 + 0.
2 1.
5 − 0.
05 + 0.
25 0.
65 ± 0.
15 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IFM IF(AV) IFSM Tj Tstg 50 50 300 100 1 125 −55 to +125 V V mA mA A °C °C 1 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M3U Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 0 to 0.
1 Parameter Symbol Rating Unit 0.
1 to 0.
3 0.
4 ± 0.
2 1.
1 I Absolute Maximum Ratings Ta = 25°C 0.
8 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 50 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 25 3 Conditions Min Typ Max 30 0.
55 Unit µA V pF ns Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 200 MHz 3.
* : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 0.
16 − 0.
06 + 0.
2 − 0.
1 + 0.
1 • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency • Reverse voltage VR (DC value) = 50 V guaranteed 1.
9 ± 0.
2 I Features 0.
95 1 3 2 0.
95 1.
45 0.
4 − 0.
05 + 0.
1 1 MA3...


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