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MA3X786D

Panasonic
Part Number MA3X786D
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3X786D Silicon epitaxial planar type For super-high speed switching circuit For small c...
Datasheet PDF File MA3X786D PDF File

MA3X786D
MA3X786D

Overview
Schottky Barrier Diodes (SBD) MA3X786D Silicon epitaxial planar type For super-high speed switching circuit For small current rectification 2.
9 − 0.
05 + 0.
2 2.
8 − 0.
3 0.
65 ± 0.
15 1.
5 + 0.
2 Unit : mm 0.
65 ± 0.
15 + 0.
25 − 0.
05 0.
95 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double*2 Single Double*2 IFSM Tj Tstg IF(AV) Symbol VR VRRM IFM Rating 30 30 300 200 100 70 1 125 −55 to +125 A mA Unit V V mA 1.
1 − 0.
1 1 : Cathode 1 2 : Cathode 2 JEDEC : TO-236 3 : Anode 1, 2 EIAJ : SC-59 Mini Type Package(3-pin) Marking Symbol: M3Y Internal Connection 1 Non-repetitive peak forward surge current*1 Junction temperature Storage temperature °C °C 2 0 to 0.
1 0.
1 to 0.
3 0.
4 ± 0.
2 0.
8 3 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 20 2 Conditions Min Typ Max 15 0.
55 Unit µA V pF ns Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 250 MHz 3.
* : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 0.
16 − 0.
06 + 0.
2 + 0.
1 • Two MA3X786s are contained in one package (anode common) • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification e...


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