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MA3X704D

Panasonic
Part Number MA3X704D
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3X704D, MA3X704E Silicon epitaxial planar type For switching circuits For wave detectio...
Datasheet PDF File MA3X704D PDF File

MA3X704D
MA3X704D

Overview
Schottky Barrier Diodes (SBD) MA3X704D, MA3X704E Silicon epitaxial planar type For switching circuits For wave detection circuit I Features • Two MA3X704As are contained in one package • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small tmperature coefficient of forward characteristic • Extremely low reverse current IR 2.
9 − 0.
05 + 0.
2 2.
8 − 0.
3 0.
65 ± 0.
15 1.
5 + 0.
2 Unit : mm 0.
65 ± 0.
15 + 0.
25 − 0.
05 0.
95 1.
9 ± 0.
2 1 3 2 0.
95 1.
45 Parameter Reverse voltage (DC) Peak forward current Forward current (DC) MA3X704D/E Single Double* Single Double* Symbol VR IFM IF Tj Tstg Rating 30 150 110 30 20 125 −55 to +125 Unit V mA MA3X704D MA3X704E JEDEC : TO-236 1 Cathode Anode EIAJ : SC-59 2 Cathode Anode Mini Type Package (3pin) 3 Anode Cathode mA °C °C Marking Symbol • MA3X704D : M2P • MA3X704E : M2R Internal Connection 1 3 2 2 1 3 Junction temperature Storage temperature Note) * : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.
9 kΩ, CL = 10 pF Conditions D Min Typ 0 to 0.
1 I Absolute Maximum Ratings Ta = 25°C 0.
1 to 0.
3 0.
4 ± 0.
2 1.
1 0.
8 E Max 1 0.
4 1.
0 1.
5 1.
0 Unit µA V V pF ns Detection efficiency 65 0.
16 − 0.
06 + 0.
2 − 0.
1 + 0.
1 0.
4 − 0.
05 + 0.
1 % Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2.
Rated input/output frequency: 2 000 MHz 3.
* : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 1 ...


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