Silicon epitaxial planar type Switching Diodes - Panasonic
Description
Switching Diodes
MA3J143, MA3J143A
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.
425
2.
1 ± 0.
1 1.
25 ± 0.
1 0.
425
+ 0.
1
2.
0 ± 0.
2 1.
3 ± 0.
1 0.
65 0.
65
I Features
• Small S-mini type package contained two elements, allowing highdensity mounting • Two diodes are connected in series in the package
1 3 2
Parameter Reverse current (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature MA3J143 MA3J143A MA3J143 MA3J143A Single Series Single Series
Symbol VR VRM IF IFM Tj Tstg
Rating 40 80 40 80 100 65 200 130 150 −55 to +150
Unit V
0.
9 ± 0.
1
I Absolute Maximum Ratings Ta = 25°C
V
mA
1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 Flat S-Mini Type Package (3-pin)
mA °C °C
Marking Symbol • MA3J143 : MC • MA3J143A : MP Internal Connection
1 3 2
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) MA3J143 MA3J143A Forward voltage (DC) Reverse voltage (DC) MA3J143 MA3J143A Terminal capacitance Reverse recovery time*3 Ct1*1 Ct2*2 trr1*1 trr2*2 Note) *1 : Between pins 2 and 3 IF = 10 mA, VR = 6 V Irr = 0.
1 · IR, RL = 100 Ω *3 : trr measuring circuit
Input Pulse tr 10% tp t IF trr t Irr = 0.
1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse
Symbol IR VF VR VR = 40 V VR = 80 V IF = 100 mA IR = 100 µA
Conditions
Min
Typ
Max 100 100 1.
2
0.
15 − 0.
05
+ 0.
1
0.
3 − 0
Unit nA
V V
40 80
VR = 0 V, f = 1 MHz 150 9
5.
5 3.
0
pF pF ns ns
*2 : Between pins 1 and 3
Bias Application Unit N-50BU
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.
35 ns δ = 0.
05
1
MA3J143, MA3J143A
Characteristics charts of MA3J143 IF V F
1 000 Between pins 1 and 3
1 000 Between pins 2 and 3
Switching Diodes
IF V F
100
IR V R
Between pins 2 and 3 Between pins 1 and 3 Ta = 150°C
100
Forward current IF (mA)
100
10 Ta = 150°C
Forward current IF (mA)
Reverse current IR (nA)
10
10
100°C 25°C − 20°C
100°C 1
1
Ta = 150°C 100°C 25°C − 20°C
...
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