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MA2SV03

Panasonic
Part Number MA2SV03
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Variable Capacitance Diodes MA2SV03 Silicon epitaxial planar type Unit : mm For VCO I Features • Good linearity and la...
Datasheet PDF File MA2SV03 PDF File

MA2SV03
MA2SV03


Overview
Variable Capacitance Diodes MA2SV03 Silicon epitaxial planar type Unit : mm For VCO I Features • Good linearity and large capacitance-ratio in CD  VR relation • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.
15 min.
0.
15 min.
0.
27 − 0.
02 0.
8 ± 0.
1 + 0.
05 1.
3 ± 0.
1 1.
7 ± 0.
1 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 −55 to +150 Unit V °C °C 0.
7 ± 0.
1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 4 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 5.
20 2.
10 2.
1 Conditions Min Typ Max 10 5.
80 2.
58 2.
6 0.
3 Unit nA pF pF  Ω Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.
1 0.
13 − 0.
02 + 0.
05 I Absolute Maximum Ratings Ta = 25°C 0.
27 − 0.
02 + 0.
05 1 MA2SV03 IF  V F 120 25°C 100 Variable Capacitance Diodes CD  VR f = 1 MHz Ta = 25°C IR  Ta 100 VR = 5 V 100 50 Diode capacitance CD (pF) Forward current IF (mA) 80 Ta = 60°C − 40°C 30 20 60 10 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 10 1 40 5 3 2 0.
1 20 0 0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1 0.
01 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) CD  Ta 1.
04 f = 1 MHz VR = 1 V 4V 1.
03 CD(Ta) CD(Ta = 25°C) 1.
02 1.
01 1.
00 0.
99 0.
98 0 20 40 60 80 100 Ambient temperature Ta (°C) 2 ...


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