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M68710TL

Mitsubishi
Part Number M68710TL
Manufacturer Mitsubishi
Description SILICON MOS FET POWER AMPLIFIER
Published Apr 26, 2005
Detailed Description MITSUBISHI RF POWER MODULE M68710TL SILICON MOS FET POWER AMPLIFIER, 330-360MHz, 2W, FM PORTABLE RADIO OUTLINE DRAWING...
Datasheet PDF File M68710TL PDF File

M68710TL
M68710TL


Overview
MITSUBISHI RF POWER MODULE M68710TL SILICON MOS FET POWER AMPLIFIER, 330-360MHz, 2W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.
2 26.
6±0.
2 21.
2±0.
2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.
5±0.
1 5 1 2 3 4 1 4 5 0.
45 6±1 13.
7±1 18.
8±1 23.
9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.
5V, ZG=ZL=50Ω f=330-360MHz, ZG=ZL=50Ω f=330-360MHz, VDD≤9V, ZG=ZL=50Ω f=330-360MHz, VDD≤9V, ZG=ZL=50Ω Ratings 9 4 30 3 -30 to +110 -40 to +110 Unit V V mW W °C °C Note.
Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd.
harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 330 2 40 Max 360 Unit MHz W % dBc - VDD=6V, VGG=3.
5V, Pin=20mW ZG=50Ω, VDD=4-8V, Load VSWR<4:1 VDD=9V, Pin=20mW, PO=2W (VGG adjust), ZL=20:1 -25 4 No parasitic oscillation No degradation or destroy Note.
Above parameters, ratings, limits and test conditions are subject to change.
Nov.
´97 ...


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