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M58MR064D

ST Microelectronics
Part Number M58MR064D
Manufacturer ST Microelectronics
Description 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
Published Apr 26, 2005
Detailed Description M58MR064C M58MR064D 64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory s SUPPLY VOLTAGE – VDD = VDDQ...
Datasheet PDF File M58MR064D PDF File

M58MR064D
M58MR064D

Overview
M58MR064C M58MR064D 64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.
8V Supply Flash Memory s SUPPLY VOLTAGE – VDD = VDDQ = 1.
65V to 2.
0V for Program, Erase and Read s s – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 54MHz – Page mode Read (4 Words Page) – Random Access: 100ns FBGA TFBGA48 (ZC) 10 x 4 ball array s PROGRAMMING TIME – 10µs by Word typical – Two or four words programming option s MEMORY BLOCKS – Dual Bank Memory Array: 16/48 Mbit – Parameter Blocks (Top or Bottom location) Figure 1.
Logic Diagram s DUAL OPERATIONS – Read within one Bank while Program or Erase within the other – No delay between Read a...


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