NPN/NPN resistor-equipped transistors - NXP
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMH2 NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
Preliminary specification 2001 Oct 22
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
FEATURES • 300 mW total power dissipation • Very small 1.
6 × 1.
2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs.
APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver.
DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package.
MARKING TYPE NUMBER PEMH2 MARKING CODE Z2
1
Top view TR1 R2
handbook, halfpage 6
PEMH2
QUICK REFERENCE DATA SYMBOL VCEO ICM TR1 TR2 R1 R2 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current NPN NPN bias resistor bias resistor MAX.
50 100 − − 47 47 UNIT V mA − − kΩ kΩ
5
4
6
5
4
R1
R2 TR2 R1
2
3
1
MHC049
2
3
Fig.
1 Simplified outline (SOT666) and symbol.
2, 5 1, 4
MBK120
6, 3
Fig.
2 Equivalent inverter symbol.
2001 Oct 22
2
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL Per transistor VCBO VCEO VEBO Vi collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1.
Transistor mounted on an FR4 printed-circuit board.
2.
The only recommended soldering method is reflow soldering.
PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 total power dissipation Tamb ≤ 25 °C; note 1 − 300 output current (...
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