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LD274

Part Number	LD274
Manufacturer	Siemens Group
Description	GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
Published	Apr 25, 2005
Detailed Description	GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 9.0 8.2 7.8 7.5 ø...
Datasheet	LD274 PDF File

Overview

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 0.
6 0.
4 2.
54 mm spacing 0.
8 0.
4 9.
0 8.
2 7.
8 7.
5 ø5.
1 ø4.
8 5.
9 5.
5 Approx.
weight 0.
5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Sehr enger Abstrahlwinkel q GaAs-IR-LED, hergestellt im q q q q Features q Extremely narrow half angle q GaAs infrared emitting diode, fabricated in a q q q q Schmelzepitaxieverfahren Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gruppiert lieferbar Gehäusegleich mit SFH 484 liquid phase epitaxy process High reliability High pulse handling capability Available in groups Same package as SFH 484 Anwendungen q IR-Fernsteuerun...

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