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K4M563233D

Part Number	K4M563233D
Manufacturer	Samsung
Description	8Mx32 Mobile SDRAM 90FBGA
Published	Apr 25, 2005
Detailed Description	K4M563233D-M(E)E/N/I/P CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.1 December 2...
Datasheet	K4M563233D PDF File

Overview

K4M563233D-M(E)E/N/I/P CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.
0V/3.
0V or 3.
3V/3.
3V) Revision 1.
1 December 2002 Rev.
1.
1 Dec.
2002 K4M563233D-M(E)E/N/I/P 2M x 32Bit x 4 Banks SDRAM in 90FBGA FEATURES • 3.
0V & 3.
3V power supply • LVCMOS compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (1, 2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle).
• Extended Temperature Operation (-25 °C ~ 85° C).
• Inderst...

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