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EL-313

Kodenshi
Part Number EL-313
Manufacturer Kodenshi
Description Infrared Emitting Diodes
Published Apr 23, 2005
Detailed Description Infrared Emitting Diodes(GaAs) K O D E N S H I EL-313 DIMENSIONS The EL-313 is a high-power GaAs IRED mounted in a cle...
Datasheet PDF File EL-313 PDF File

EL-313
EL-313

Overview
Infrared Emitting Diodes(GaAs) K O D E N S H I EL-313 DIMENSIONS The EL-313 is a high-power GaAs IRED mounted in a clear side-viewing package.
This IRED is both compact and easy to mount.
(Unit : mm) FEATURES ¶UCompact plastic mold type APPLICATIONS ¶UOptical switches ¶UTransmission sensors MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp.
Storage temp.
*2 Soldering temp.
(Ta=2°…) 5 Symbol VR F I PD FP I Topr.
Tstg.
Tsol.
Rating 4 50 100 1 £≠ 20 °≠£´ 85 £≠ 30 °≠£´ 85 240 Unit V mA mW A °… °… °… *1.
pulse width £∫tw ßZ100 sec.
period •Ï £∫ T=10msec *2.
For MAX.
5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Radiant intensity *3 Half angle Tr *3.
Exclusive P is used as detector (Ta=2° 5…) Symbol VF R I •Îp PO •ƒ•Ë Conditions F=30mA I VR=4V F=20mA I F=30mA I Min.
Typ.
1.
2 940 2.
0 °æ 20 Max.
1.
5 10 Unit.
V •Ï A nm mW deg.
- 1- Infrared Emitting Diodes(GaAs) EL-313 Power dissipation Vs.
Ambient temperature Radiant intensity Vs.
Forward current Relative radiant intensity Vs.
Ambient temperature Relative intensity Vs.
Wavelength Forward current vs.
Forward voltage Radiant Pattern Relative radiant intensity Vs.
Distance - 2- ...


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