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FS10KM-06

Mitsubishi
Part Number FS10KM-06
Manufacturer Mitsubishi
Description Nch POWER MOSFET
Published Apr 23, 2005
Detailed Description MITSUBISHI Nch POWER MOSFET FS10KM-06 HIGH-SPEED SWITCHING USE FS10KM-06 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 ...
Datasheet PDF File FS10KM-06 PDF File

FS10KM-06
FS10KM-06

Overview
MITSUBISHI Nch POWER MOSFET FS10KM-06 HIGH-SPEED SWITCHING USE FS10KM-06 OUTLINE DRAWING 10 ± 0.
3 6.
5 ± 0.
3 3 ± 0.
3 Dimensions in mm 2.
8 ± 0.
2 15 ± 0.
3 f 3.
2 ± 0.
2 14 ± 0.
5 3.
6 ± 0.
3 1.
1 ± 0.
2 1.
1 ± 0.
2 0.
75 ± 0.
15 E 0.
75 ± 0.
15 2.
54 ± 0.
25 2.
54 ± 0.
25 4.
5 ± 0.
2 1 2 3 2.
6 ± 0.
2 ¡10V DRIVE ¡VDSS .
.
60V ¡rDS (ON) (MAX) .
.
78m Ω ¡ID .
.
.
.
10A ¡Integrated Fast Recovery Diode (TYP.
) .
.
.
55ns ¡Viso 2000V w q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V Conditions Ratings 60 ±20 10 40 10 10 40 20 –55 ~ +150 Unit V V A A A A A W °C °C V g Feb.
1999 AC for 1minute, Terminal to case Typical value –55 ~ +150 2000 2.
0 MITSUBISHI Nch POWER MOSFET FS10KM-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz Limits Min.
60 — — 2.
0 — — — — — — — Typ.
— — — 3.
0 58 0.
29 9.
0 600 18...


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