DatasheetsPDF.com

APT6029BLL

Advanced Power Technology
Part Number APT6029BLL
Manufacturer Advanced Power Technology
Description Power MOSFET
Published Apr 23, 2005
Detailed Description APT6029BLL APT6029SLL 600V 21A 0.290Ω POWER MOS 7 R MOSFET BLL Power MOS 7® is a new generation of low loss, high vol...
Datasheet PDF File APT6029BLL PDF File

APT6029BLL
APT6029BLL

Overview
APT6029BLL APT6029SLL 600V 21A 0.
290Ω POWER MOS 7 R MOSFET BLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching losses and Q are addressed .
Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses g along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
TO-247 • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package D3PAK SLL D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified.
APT6029BFLL_SFLL UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 600 21 84 ±30 ±40 300 2.
40 Volts Amps Volts Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 21 30 1210 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 10.
5A) IDSS Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 0.
290 100 500 ±100 5 Volts Ohms µA nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com 050-7054 Rev D 9-2004...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)