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APT6015LVFR

Advanced Power Technology
Part Number APT6015LVFR
Manufacturer Advanced Power Technology
Description Power MOSFET
Published Apr 23, 2005
Detailed Description APT6015B2VFR APT6015LVFR 600V 38A 0.150Ω POWER MOS V® FREDFET B2VFR Power MOS V® is a new generation of high voltage N...
Datasheet PDF File APT6015LVFR PDF File

APT6015LVFR
APT6015LVFR

Overview
APT6015B2VFR APT6015LVFR 600V 38A 0.
150Ω POWER MOS V® FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™ TO-264 LVFR • Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS • Avalanche Energy Rated • T-MAX™ or TO-264 Package D G S All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT6015B2VFR_LVFR 600 38 152 ±30 ±40 520 4.
16 -55 to 150 300 38 50 2500 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) 38 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.
5 ID[Cont.
]) IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.
5mA) 2 0.
150 250 1000 ±100 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com UNIT Volts Amps Ohms µA nA Volts 050-5945 Rev A 6-2004 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Q...


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