Power MOSFET - Advanced Power Technology
Description
APT50M65B2FLL APT50M65LFLL
500V 67A 0.
065Ω
POWER MOS 7 R FREDFET B2FLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS.
Both conduction and switching
losses and Q
are addressed .
Power MOS
with Power MOS 7® by significantly lowering 7® combines lower conduction and switching
RDS(ON) losses
g
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
• Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package
T-MaxTM
TO-264
LFLL D
G S
MAXIMUM RATINGS
Symbol Parameter
VDSS ID IDM
VGS VGSM
PD
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor
TJ,TSTG TL IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
STATIC ELECTRICAL CHARACTERISTICS
All Ratings: TC = 25°C unless otherwise specified.
APT50M65B2FLL_LFLL UNIT
500
Volts
67 Amps
268
±30 Volts
±40
694
Watts
5.
5
W/°C
-55 to 150 °C
300
67
Amps
50 mJ
3000
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 33.
5A)
IDSS
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.
5mA)
3
0.
065 250 1000 ±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com
UNIT Volts Ohms
µA
nA Volts
050-...
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