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APT5010B2VFR

Advanced Power Technology
Part Number APT5010B2VFR
Manufacturer Advanced Power Technology
Description Power MOSFET
Published Apr 23, 2005
Detailed Description APT5010B2VFR 500V 47A 0.100Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel ...
Datasheet PDF File APT5010B2VFR PDF File

APT5010B2VFR
APT5010B2VFR

Overview
APT5010B2VFR 500V 47A 0.
100Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode • Lower Leakage • Faster Switching • 100% Avalanche Tested D • New T-MAX™ Package (Clip-mounted TO-247 Package) G FREDFET S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT5010B2VFR UNIT Volts Amps 500 47 188 ±30 ±40 520 4.
16 -55 to 150 300 47 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10...


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