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APT10086BVFR

Advanced Power Technology
Part Number APT10086BVFR
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description APT10086BVFR 1000V 13A 0.860Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel...
Datasheet PDF File APT10086BVFR PDF File

APT10086BVFR
APT10086BVFR

Overview
APT10086BVFR 1000V 13A 0.
860Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% Avalanche Tested FREDFET D G S • Popular TO-247 Package All Ratings: TC = 25°C unless otherwise specified.
APT10086BVR UNIT Volts Amps 1000 13 52 ±30 ±40 370 2.
96 -55 to 150 300 13 30 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 13 0.
86 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID[Cont.
]) Ohms µA nA Volts 050-5595 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.
0mA) APT Website - http://www.
advancedpower.
com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Foll...


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