GaAlAs Infrared Emitting Diodes - PerkinElmer Optoelectronics
Description
GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Plastic Package — 880 nm
VTE1281W-1, W-2
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 26W T-1¾ (5 mm) WIDE ANGLE CHIP SIZE: .
015" x .
015"
This wide beam angle 5 mm diameter plastic packaged emitter contains a GaAlAs, 880 nm IRED chip.
It is a cost effective design and is well suited for high current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.
): -40°C to 100°C 200 mW 2.
86 mW/°C 100 mA 1.
43 mA/°C 2.
5 A -.
8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.
): Response Time @ IF = 20 mA Rise: 1.
0 µs Fall: 1.
0 µs Lead Soldering Temperature: (1.
6 mm from case, 5 seconds max.
) 5.
0V 10 µA 880 nm 23 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Output Irradiance Part Number Ee mW/cm2 Min.
VTE1281W-1 VTE1281W-2 1.
2 2.
5 Typ.
1.
6 3.
3 Condition distance mm 36 36 Diameter mm 6.
4 6.
4 Radiant Intensity Ie mW/sr Min.
16 32 Total Power PO mW Typ.
20 25 Test Current IFT mA (Pulsed) 100 100 Forward Drop VF @ IFT Volts Typ.
Typ.
1.
5 1.
5 Max.
2.
0 2.
0 ±25° ±25° Half Power Beam Angle θ1/2
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave.
, St.
Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.
perkinelmer.
com/opto
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