NPN Transistor - NEC
Description
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA801TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
DESCRIPTION
The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band.
FEATURES
• Low noise: NF = 1.
2 dB TYP.
@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.
0 dB TYP.
@ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 × 2SC5006)
ORDERING INFORMATION
Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Supplying Form Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
µPA801TC
µPA801TC-T1
Taping products (3 kp/reel)
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
µPA801TC.
Unit sample quantity is 50 pcs.
)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PTNote Ratings 20 12 3 100 200 in 1 element 230 in 2 elements 150 –65 to +150 Unit V V V mA mW
Junction Temperature Storage Temperature
Tj Tstg
˚C ˚C
Note
Mounted on 1.
08 cm2 × 1.
0 mm glass epoxy substrate.
Caution Electro-static sensitive devices
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
P14548EJ1V1DS00 (1st edition) Date Published February 2000 N CP(K) Printed in Japan
©
1999
µPA801TC
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feedback Cap...
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