P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1856
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µPA1856 is a switching device which can be driven directly by a 2.
5-V power source.
The µPA1856 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.
2 MAX.
1.
0±0.
05 0.
25
° 3° +5 –3°
FEATURES
• Can be driven by a 2.
5-V power source • Low on-state resistance RDS(on)1 = 45 mΩ MAX.
(VGS = –4.
5 V, ID = –2.
5 A) RDS(on)2 = 48 mΩ MAX.
(VGS = –4.
0 V, ID = –2.
5 A) RDS(on)3 = 72 mΩ MAX.
(VGS = –2.
7 V, ID = –2.
5 A) RDS(on)4 = 77 mΩ MAX.
(VGS = –2.
5 V, ID = –2.
5 A)
1 4
0.
1±0.
05
0.
5 0.
6 +0.
15 –0.
1
0.
145 ±0.
055
3.
15 ±0.
15 3.
0 ±0.
1
6.
4 ±0.
2 4.
4 ±0.
1 1.
0 ±0.
2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.
65 0.
27 +0.
03 –0.
08 0.
8 MAX.
µPA1856GR-9JG
0.
1
0.
10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
–20 ±12 ±4.
5 ±18 2.
0 150 V V A A W °C °C
Gate1 Gate Protection Diode Source1 Drain1 Drain2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
Body Diode
Gate2 Gate Protection Diode Source2
Body Diode
Total Power Dissipation Channel Temperature Storage Temperature
–55 to +150
Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2.
Mounted on ceramic substrate of 5000 mm x 1.
1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
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