P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1851
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µPA1851 is a switching device which can be driven directly by a 4.
0-V power source.
The µPA1851 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.
2 MAX.
1.
0±0.
05 0.
25
° 3° +5 –3°
FEATURES
• Can be driven by a 4.
0-V power source • Low on-state resistance RDS(on)1 = 105 mΩ MAX.
(VGS = –10 V, ID = –1.
5 A) RDS(on)2 = 210 mΩ MAX.
(VGS = –4.
5 V, ID = –1.
5 A) RDS(on)3 = 250 mΩ MAX.
(VGS = –4.
0 V, ID = –1.
5 A) • Built-in G-S protection diode against ESD
1 4
0.
1±0.
05
0.
5 0.
6 +0.
15 –0.
1
0.
145 ±0.
055
3.
15 ±0.
15 3.
0 ±0.
1
6.
4 ±0.
2 4.
4 ±0.
1 1.
0 ±0.
2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.
65 0.
27 +0.
03 –0.
08 0.
8 MAX.
µPA1851GR-9JG
0.
1
0.
10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
–20 –20/+5
V V A A W °C °C
Gate Protection Diode Gate1
EQUIVALENT CIRCUIT
Drain1 Drain2
! 2.
5 ! 10
2.
0 150 –55 to +150
Total Power Dissipation Channel Temperature Storage Temperature
Body Diode
Gate2
Body Diode
Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2.
Mounted on ceramic substrate of 50 cm x 1.
1 mm Remark
Source1
Gate Protection Diode
Source2
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
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