DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1802
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µPA1802 is a switching device which can be driven directly by a 2. 5-V power source. The µPA1802 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate
1. 2 MAX. 1. 0±0. 05 0. 25
° 3° +5 –3°
FEATURES
• Can be driven by a 2. 5-V power source • Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 4. 5 V, ID = 3. 5 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4. 0 V, ID = 3. 5 A) RDS(on)3 = 32 mΩ MAX. (VGS = 2. 5 V, ID = 3. 5 A)
1 4
0. 1±0. 05
0. 5 0. 6 +0. 15 –0. 1
0. 145 ±0. 055
3. 15 ±0. 15 3. 0 ±0. 1
6. 4 ±0. 2 4. 4 ±0. 1 1. 0 ±0. 2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0. 65 0. 27 +0. 03 –0. 08 0. 8 MAX.
µPA1802GR-9JG
0. 1
0. 10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
20 ±12 ±7. 0 ±28 2. 0 150 –55 to +150 V V A A W °C °C
Gate Protection Diode Source Gate Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
Body Diode
Total Power Dissipation Channel Temperature Storage Temperature
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 5000 mm x 1. 1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
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Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D12966EJ1V0DS00 (1st edition) Date Published January...