SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE - NEC
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1728
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The µPA1728 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
PACKAGE DRAWING (Unit : mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
FEATURES
• Single chip type • Low On-state Resistance 5 5 5 5 RDS(on)1 = 19 mΩ (TYP.
) (VGS = 10 V, ID = 4.
5 A)
1.
44
1 5.
37 Max.
+0.
10 –0.
05
4
6.
0 ±0.
3 4.
4 0.
8
RDS(on)2 = 23 mΩ (TYP.
) (VGS = 4.
5 V, ID = 4.
5 A) RDS(on)3 = 24 mΩ (TYP.
) (VGS = 4.
0 V, ID = 4.
5 A) • Low Ciss : Ciss = 1700 pF (TYP.
) • Built-in G-S protection diode • Small and surface mount package (Power SOP8)
1.
8 Max.
0.
15
0.
05 Min.
0.
5 ±0.
2 0.
10
1.
27 0.
40
0.
78 Max.
0.
12 M
+0.
10 –0.
05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1728
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.
)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
60 ±20 ±9 ±36 2.
0 150 –55 to + 150 9 8.
1
2
V V A A W
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current
Note3 Note3
Gate
Body Diode
°C °C A mJ
Gate Protection Diode
IAS EAS
Source
Single Avalanche Energy Notes 1.
PW ≤ 10 µs, Duty cycle ≤ 1 % 5
2.
Mounted on ceramic substrate of 1200 mm x 2.
2 mm 3.
Starting Tch = 25°C, RG = 25 Ω, TGS = 20 V →0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
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