SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE - NEC
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1727
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The µPA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
PACKAGE DRAWING (Unit : mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
FEATURES
• Single chip type • Low On-state Resistance
1.
44
5 5 5 5
RDS(on)1 = 14 mΩ (TYP.
) (VGS = 10 V, ID = 5.
0 A) RDS(on)2 = 17 mΩ (TYP.
) (VGS = 4.
5 V, ID = 5.
0 A) RDS(on)3 = 19 mΩ (TYP.
) (VGS = 4.
0 V, ID = 5.
0 A) • Low Ciss : Ciss = 2400 pF (TYP.
) • Built-in G-S protection diode • Small and surface mount package (Power SOP8)
1.
8 Max.
1 5.
37 Max.
4
6.
0 ±0.
3 4.
4
+0.
10 –0.
05
0.
8
0.
15
0.
05 Min.
0.
5 ±0.
2 0.
10
1.
27 0.
40
0.
78 Max.
0.
12 M
+0.
10 –0.
05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1727
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.
)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
60 ±20 ±10 ±40 2.
0 150 –55 to + 150 10 200
V V A A W °C °C A mJ
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current 5 Single Avalanche Energy
Note3 Note3
Gate
Body Diode
IAS EAS
Gate Protection Diode
Source
Notes 1.
PW ≤ 10 µs, Duty cycle ≤ 1 % 5 2.
Mounted on ceramic substrate of 1200 mm x 2.
2 mm 3.
Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
2
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