SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE - NEC
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1726
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
DESCRIPTION
The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management 5 applications of notebook computers and so on.
FEATURES
• 2.
5-V gate drive and low on-resistance RDS(on)1 = 9.
1 mΩ MAX.
(VGS = 4.
5 V, ID = 6.
0 A) 5 5
1.
44
RDS(on)2 = 10.
0 mΩ MAX.
(VGS = 4.
0 V, ID = 6.
0 A)
1.
8 MAX.
1 5.
37 MAX.
4
6.
0 ±0.
3 4.
4
+0.
10 –0.
05
RDS(on)3 = 12.
5 mΩ MAX.
(VGS = 2.
5 V, ID = 6.
0 A) • Low Ciss: Ciss = 2700 pF TYP.
• Built-in G-S protection diodes • Small and surface mount package (Power SOP8)
0.
8
0.
15
0.
05 MIN.
0.
5 ±0.
2 0.
10
1.
27 0.
78 MAX.
0.
40
+0.
10 –0.
05
0.
12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1726G
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.
)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
20 ±12 ±12 ±48 2.
0 150 –55 to +150
V V A A W °C °C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature
Gate
Body Diode
Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1 % 2.
Mounted on ceramic substrate of 1200 mm x 2.
2 mm Remark
2
Gate Protection Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
G14050EJ1V0DS00 (1st edition) Date Published February 2000 NS CP(K) Pri...
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