SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE - NEC
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1725
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This µPA1725 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1, 2,3 4 5,6,7,8 ; ; ; ; Non connection Source Gate Drain
FEATURES
• 2.
5-V gate drive and low on-resistance
1.
8 MAX.
• Built-in G-S protection diode • Small and surface mount package (Power SOP8)
0.
05 MIN.
• Low Ciss : Ciss = 950 pF TYP.
0.
15
•
RDS(on)3 = 30.
0 mΩ MAX.
(VGS = 2.
5 V, ID = 3.
5 A)
+0.
10 –0.
05
• •
1.
44
RDS(on)1 = 21.
0 mΩ MAX.
(VGS = 4.
5 V, ID = 3.
5 A) RDS(on)2 = 22.
0 mΩ MAX.
(VGS = 4.
0 V, ID = 3.
5 A)
1 5.
37 MAX.
4
6.
0 ±0.
3 4.
4 0.
8
0.
5 ±0.
2 0.
10
1.
27 0.
78 MAX.
0.
40
+0.
10 –0.
05
0.
12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1725G
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.
)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
20 ±12 ±7 ±28 2.
0 150 –55 to + 150
2
V V A A W °C °C
Gate Protection Diode Source Gate Body Diode
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature
Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1 % 2.
Mounted on ceramic substrate of 1200 mm x 2.
2mm Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
G14049EJ1V0DS00 (1st edition) Date Published Janua...
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