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UPA1725

NEC

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE - NEC


UPA1725
UPA1725

PDF File UPA1725 PDF File



Description
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1725 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This µPA1725 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on.
8 PACKAGE DRAWING (Unit : mm) 5 1, 2,3 4 5,6,7,8 ; ; ; ; Non connection Source Gate Drain FEATURES • 2.
5-V gate drive and low on-resistance 1.
8 MAX.
• Built-in G-S protection diode • Small and surface mount package (Power SOP8) 0.
05 MIN.
• Low Ciss : Ciss = 950 pF TYP.
0.
15 • RDS(on)3 = 30.
0 mΩ MAX.
(VGS = 2.
5 V, ID = 3.
5 A) +0.
10 –0.
05 • • 1.
44 RDS(on)1 = 21.
0 mΩ MAX.
(VGS = 4.
5 V, ID = 3.
5 A) RDS(on)2 = 22.
0 mΩ MAX.
(VGS = 4.
0 V, ID = 3.
5 A) 1 5.
37 MAX.
4 6.
0 ±0.
3 4.
4 0.
8 0.
5 ±0.
2 0.
10 1.
27 0.
78 MAX.
0.
40 +0.
10 –0.
05 0.
12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1725G ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.
) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 ±12 ±7 ±28 2.
0 150 –55 to + 150 2 V V A A W °C °C Gate Protection Diode Source Gate Body Diode EQUIVALENT CIRCUIT Drain Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1 % 2.
Mounted on ceramic substrate of 1200 mm x 2.
2mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
G14049EJ1V0DS00 (1st edition) Date Published Janua...



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