DatasheetsPDF.com

UML6N

Rohm
Part Number UML6N
Manufacturer Rohm
Description General purpose transistor
Published Apr 17, 2005
Detailed Description UML6N Transistors General purpose transistor (isolated transistor and diode) UML6N 2SA2018 and RB521S-30 are housed ind...
Datasheet PDF File UML6N PDF File

UML6N
UML6N


Overview
UML6N Transistors General purpose transistor (isolated transistor and diode) UML6N 2SA2018 and RB521S-30 are housed independently in a UMT package.
(4) (3) zApplications DC / DC converter Motor driver zExternal dimensions (Unit : mm) 0.
65 0.
65 1.
3 0.
9 0.
2 0.
15 zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package (5) 1.
25 2.
1 0.
7 0.
1Min.
zStructure Silicon epitaxial planar transistor Schottky barrier diode 0~0.
1 Each lead has same dimensions ROHM : UMT5 EIAJ : SC-88A zEquivalent circuit (3) (2) (1) Tr2 Di1 (4) (5) zPackaging specifications Type UML6N Package UMT5 Marking L6 Code TR Basic ordering unit (pieces) 3000 (1) Rev.
A 2.
0 (2) 1/3 UML6N Transistors zAbsolute maximum ratings (Ta=25°C) Di1 Parameter Symbol IO Average revtified forward current Forward current surge peak (60Hz, 1∞) IFSM VR Reverse voltage (DC) Tj Junction temperature Tstg Range of storage temperature Limits 200 1 30 125 −55~+125 Unit mA A V °C °C Tr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 15 12 6 500 1 120 150 −55~+125 Unit V V V mA A mW °C °C ∗1 ∗1 Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C) Di1 Parameter Forward voltage Reverse current Symbol VR IR Min.
− − Typ.
0.
40 4.
0 Max.
0.
50 30 Unit V µA Conditions IF=200mA VR=10V Tr2 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min.
12 15 6 − − − 270 − − Typ.
− − − − − 90 − 320 7.
5 Max.
− − − 100 100 250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=1mA IC=10µA IE=10µA VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=−10m...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)