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S1T2410B02

Samsung semiconductor

bipolar integrated circuit designed as telephone bell replacement - Samsung semiconductor


S1T2410B02
S1T2410B02

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Description
TONE RINGER S1T2410B01/B02 INTRODUCTION The S1T2410B01/B02 is a bipolar integrated circuit designed as a telephone bell replacement.
8−DIP−300 FUNCTIONS • • • Two oscillators Output amplifier Power supply control circuit FEATURES • • • • • • • • • • Designed for telephone bell replacement Low drain current Small size MINIDIP package Adjustable 2-frequency tone Adjustable warbling rate Built-in hysteresis prevents false triggering and rotary dial ‘CHIRPS’ Extension tone ringer modules Alarms or other alerting devices External triggering or ringer disable (S1T2410B01) Adjustable for reduced initial supply current (S1T2410B02) ORDERING INFORMATION Device S1T2410B01-D0B0 S1T2410B02-D0B0 Package 8-DIP-300 Operating Temperature −45°C to +65°C 1 S1T2410B01/B02 TONE RINGER PIN CONFIGURATION VCC VCONT LFI LFO 1 2 3 4 8 7 6 5 OUTPUT HFI HFO GND S1T2410B01/ S1T2410B02 ABSOLUTE MAXIMUM RATINGS Characteristic Supply Voltage Power Dissipation Operating Temperature Storage Temperature Symbol VCC PD TOPR TSTG Value 30 400 − 45 to +65 −65 to +150 Unit V mW °C °C 2 TONE RINGER S1T2410B01/B02 ELECTRICAL CHARACTERISTICS (Ta = 25°C) (All voltage referenced to GND unless otherwise specified) Characteristic Operating Voltage Initiation Voltage1 Initiation Current1 Sustaining Voltage2 Sustaining Current2 Trigger Voltage3 Trigger Current3 Disable Voltage4 Disable Current4 Output Voltage High Output Voltage Low Input Current 1 (Pin 3) Input Current 2 (Pin 7) High Frequency 1 High Frequency 2 Low Frequency Symbol VCC VSI ISI VSUS ISUS VTRG ITRG VDIS IDIS VOH VOL II (PIN 3) II (PIN 7) fH1 fH2 fL See Fig.
1 S1T2410B02 -6.
8K-Pin 2 to GND See Fig.
1 No Load VCC = VSUS, See Fig.
1 S1T2410B01 Only VCC = 15V S1T2410B01 Only S1T2410B01 Only S1T2410B01 Only VCC = 21V, I8 = −15mA Pin 6 = 6V, Pin 7 = GND VCC = 21V, I8 = 15mA Pin 6 = GND, Pin 7 = 6V Pin 3 = 6V, Pin 4 = GND Pin 7 = 6V, Pin 6 = GND R3 = 191K, C3 = 6800pF R3 = 191K, C3 = 6800pF R2 = 165K, C2 = 0.
47µF − − 461 576 9.
0 − − ...



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