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BUJ106A

NXP
Part Number BUJ106A
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Se...
Datasheet PDF File BUJ106A PDF File

BUJ106A
BUJ106A

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Silicon Diffused Power Transistor Product specification BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector curre...


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